Dry etching method and semiconductor device fabrication method

Details Dry etching method and semiconductor device fabrication method Dry etching method and semiconductor device fabrication method

1998-10-26

2000-05-30

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438743, H01L 2100

Patent

active

060690925

ABSTRACT:
The present invention discloses a dry etching method using a high density plasma, in which a fluorocarbon gas, whose fluorine to carbon ratio is less than 2:1, is used. Such arrangement provides improved etching selectivity ratios to the resist film. The adding of an inert gas and oxygen to such a fluorocarbon gas provides further improved etching selectivity ratios and improved etching rates.

REFERENCES:
patent: 5366590 (1994-11-01), Kadomura
patent: 5595627 (1997-01-01), Inazawa et al.
patent: 5770098 (1998-06-01), Araki et al.

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