Dry etching method and apparatus

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S717000, C438S725000

Reexamination Certificate

active

10924983

ABSTRACT:
A condition without using Ar as plasma gas is applied to processing of an organic anti-reflection-coating, which suppresses a spatter effect and decreases the cleavage of C—H and OC—O bonds in a resist. As a result, roughness of the resist after processing the anti-reflection-coating can be suppressed, and pitting and striations after processing a next film to be processed, that is an insulating film, can be prevented. For a rare gas to be used at the time of processing the insulating film, any one of Xe, Kr, a mixed gas of Ar and Xe, and a mixed gas of Ar and Kr is applied in place of Ar, giving rise to reduction in pitting and striations after etching. In addition, a dry etching method with less critical-dimension shift and excellence in both apparatus cost and throughput can be provided by performing resist modification and etching by turns.

REFERENCES:
patent: 5804088 (1998-09-01), McKee
patent: 6117786 (2000-09-01), Khajehnouri et al.
patent: 6159862 (2000-12-01), Yamada et al.
patent: 7022611 (2006-04-01), Keil et al.
patent: 2002/0048019 (2002-04-01), Sui et al.
patent: 2003/0000920 (2003-01-01), Lee

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