Dry etching method and apparatus

Details Dry etching method and apparatus Dry etching method and apparatus

2008-05-13

2008-05-13

Deo, Duy-Vu N (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S717000, C438S725000

Reexamination Certificate

active

10924983

ABSTRACT:
A condition without using Ar as plasma gas is applied to processing of an organic anti-reflection-coating, which suppresses a spatter effect and decreases the cleavage of C—H and OC—O bonds in a resist. As a result, roughness of the resist after processing the anti-reflection-coating can be suppressed, and pitting and striations after processing a next film to be processed, that is an insulating film, can be prevented. For a rare gas to be used at the time of processing the insulating film, any one of Xe, Kr, a mixed gas of Ar and Xe, and a mixed gas of Ar and Kr is applied in place of Ar, giving rise to reduction in pitting and striations after etching. In addition, a dry etching method with less critical-dimension shift and excellence in both apparatus cost and throughput can be provided by performing resist modification and etching by turns.

REFERENCES:
patent: 5804088 (1998-09-01), McKee
patent: 6117786 (2000-09-01), Khajehnouri et al.
patent: 6159862 (2000-12-01), Yamada et al.
patent: 7022611 (2006-04-01), Keil et al.
patent: 2002/0048019 (2002-04-01), Sui et al.
patent: 2003/0000920 (2003-01-01), Lee

Affiliated with

Also associated with

Rating

Dry etching method and apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dry etching method and apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dry etching method and apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3931896