Dry etching method and apparatus

Details Dry etching method and apparatus Dry etching method and apparatus

2005-05-17

2005-05-17

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S712000, C438S714000, C216S058000

Reexamination Certificate

active

06893971

ABSTRACT:
A dry etching method and apparatus are provided which are capable of performing deep etching fabrication rapidly on a substrate of an InP-based compound semiconductor. Etching gas is fed into and exhausted from a reaction chamber so that an interior of the chamber is controlled to be under a predetermined pressure. Plasma is then generated in the reaction chamber by application of at least 13.56 MHz high-frequency power to a flat spiral discharge coil or a flat antenna that is provided so as to face an InP-based compound semiconductor substrate placed on a substrate electrode in the reaction chamber, and the substrate is etched while a density of the plasma and ion energy that reaches the substrate are controlled.

REFERENCES:
patent: 5683548 (1997-11-01), Hartig et al.
patent: 5877032 (1999-03-01), Guinn et al.
patent: 6439154 (2002-08-01), Fukuda et al.
patent: 6579802 (2003-06-01), Pierson et al.
C.Y. Chang & S.M. Sze, entitled “ULSI Technology”, McGraw-Hill Series in Electrical and Computer Engineering, issued in 1996, p. 351.

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