Dry etching method

Details Dry etching method Dry etching method

2005-01-18

2005-01-18

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S714000, C716S056000

Reexamination Certificate

active

06844264

ABSTRACT:
When the Cu-containing aluminum film is dry-etched with etching gas containing chlorine gas, the gas stay time τ of the etching gas staying in the chamber, which is expressed by P·V/Q, where P being the chamber pressure (unit: Pa), V the chamber volume (unit: L) and Q the total flow of etching gas (unit: Pa·L/sec), is from 0.15 seconds to 0.30 seconds inclusive.

REFERENCES:
patent: 4708766 (1987-11-01), Hynecek
patent: 5368685 (1994-11-01), Kumihashi et al.
patent: 5801101 (1998-09-01), Miyoshi
patent: 6220201 (2001-04-01), Nowak et al.

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