Dry etching method

Details Dry etching method Dry etching method

1993-11-12

1995-05-02

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Etching a multiple layered substrate where the etching...

134 1, 216 48, 216 47, 216 67, 216 77, 216 13, H01L 2100

Patent

active

054116317

ABSTRACT:
According to this invention, a dry etching method includes the step of sequentially forming an SiO.sub.2 film, an Al--Si--Cu thin film, and a photoresist on an Si substrate to sequentially form a mask pattern, the step of etching the Al--Si--Cu thin film by RIE using a gas mixture of Cl.sub.2 and BCl.sub.3 as an etching gas, and the step of removing etching residues by a sputter effect obtained by the plasma of the BCl.sub.3 gas.

REFERENCES:
patent: 4030967 (1977-06-01), Ingrey et al.
patent: 4351696 (1982-09-01), Radigan
patent: 4370195 (1983-01-01), Halon et al.
patent: 4678540 (1987-07-01), Uchimura
patent: 5259923 (1993-11-01), Hori et al.

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