Dry etching method

Details Dry etching method Dry etching method

1991-04-19

1994-04-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 156643, H01L 2100, H01L 2102, H01L 21302, H01L 21463

Patent

active

053045149

ABSTRACT:
The present invention provides a dry etching method, having the steps of introducing a mixed gas consisting of a reactive gas and an inert gas into a plasma chamber for generating a plasma, with the partial pressure of each of these gas components being controlled, exciting the mixed gas within the plasma chamber so as to generate ionized particles and excited particles having high reactivity, withdrawing the particles generated in the plasma chamber into a sample chamber having a compound semiconductor substrate housed therein, and physically and chemically etching the compound semiconductor substrate with the particles.

REFERENCES:
patent: 4659449 (1987-04-01), Watanabe
patent: 4874459 (1989-10-01), Coldren et al.
Sze, VLSI Technology, McGraw-Hill, 1988, pp. 215, 216, 218.
Proceedings of the 12th Int. Symp. on GaAs and related Compounds, Sep. 23-26, 1985, K. Asakawa, et al. pp. 373-378, "Suppression of Damage and Contamination on Reactive-Ion-Beam -Etched GaAs Surface Using a Novel UHV Etching System With. . ."
Journal of Vac. Science and Technology: Part B, vol. 3, No. 1, Jan./Feb. 1985, K. Asakawa, et al., pp. 402-405, "GaAs And AlGaAs Anisotropic Fine Pattern Etching Using A New Reactive Ion Beam Etching System".
Journal of Vac. Science and Technology: Part A, vol. 19, No. 4, Nov./Dec. 1981, M. W. Geis, et al., pp. 1390-1393, "A Novel Anisitropic Dry Etching Technique".
Applied Physics Letters, vol. 40, No. 7, Apr., 1982, R. A. Barker, et al., pp. 583-586, "Surface Composition and Etching of III-V Semiconductors in Cl.sub.2 Ion Beams".
Journal of Applied Physics, vol. 66, No. 6, Sep. 15, 1989, F. Shimokawa, et al., pp. 2613-2618, "Reactive-Fast-Atom Beam Etching of GaAs Using Cl.sub.2 GAS".
Japanese Journal of Applied Physics, Extended Abstracts 22th Conf. Solid State Devices and Materials, 1990, T. Nishibe, et al., pp. 473-476, "Dry Etching of InGaAsP/InP Structures by Reactive Ion Beam Etching Using Chlorine and Argon".
Record of Alloy Semiconductor Electronics Symposium, pp. 461-470, 1985, H. Yamada, et al., "Reactive Ion Etching For Integrated Opto-Electronic Devices Using III-V Alloy Semiconductors".
Dry Process Symposium, pp. 149-153, 1985, H. Yamada, et al., "Reactive Ion Etching of GaAsP and GaAs For Integrated Optical Devices".
J. Vac. Sci. Technol. B, vol. 3, pp. 884-888, May/Jun. 1985, H. Yamada, et al., "Anisotropic Reactive Ion Etching Technique Of GaAs and AIGaAs Materials For Integrated Optical Device Fabrication", No. 3.
Nuclear Instruments & methods in Physics Research, B7/8, pp. 814-819, 1985, N. L. DeMeo, et al., "Low Power Ion-Beam-Assisted Etching of Indium Phosphide".

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