Dry etching method

Details Dry etching method Dry etching method

1997-12-29

1999-10-26

Breneman, Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438743, H01L 21311

Patent

active

059727993

ABSTRACT:
There is provided a dry etching method which does not contribute to earth anathermal due to the green house effect and which has a good etching characteristics. According to the present invention, the flow rates of Ar, O.sub.2, and C.sub.3 F.sub.6 supplied from gas sources 152, 154 and 156 are regulated by a mass flow controller MFC 146, 148 and 150 and valves 140, 142 and 144, respectively, to be mixed. The mixed gas is introduced onto a wafer W via a gas introducing pipe 138, a gas inlet 134, a space 130 and through holes 124a while the flow ratio of O.sub.2 to C.sub.3 F.sub.6 is set to be 0.1.ltoreq.O.sub.2 /C.sub.3 F.sub.6 .ltoreq.1.0 and the partial pressure of C.sub.3 F.sub.6 is set to be in the range of from 0.5 mTorr to 2.0 mTorr.

REFERENCES:
patent: 5770098 (1998-06-01), Araki et al.

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