Dry etching method

Details Dry etching method Dry etching method

1994-02-16

1995-07-04

Powell, William

Etching a substrate: processes

Forming or treating electrical conductor article

Forming or treating of groove or through hole

1566441, 216 41, 216 67, 216 79, B44C 122, C23F 102, C03C 1500

Patent

active

054297109

ABSTRACT:
A dry etching method for forming a connection opening in a insulating film of a silicon compound formed on an Al-based interconnection layer. The dry etching method consists in etching an SiO.sub.2 interlayer insulating film on an Al-1% Si layer, in a magnetic micro-wave plasma etching device capable of generating a high-density plasma with an ion density of not less than 10.sup.11 ions/cm.sup.3, using a c-C.sub.4 F.sub.8 /CH.sub.2 F.sub.2 gas mixture. A layer of a reaction product having a low vapor pressure is generated on an exposed surface of the Al-1% Si layer at the time point when the connection opening is formed in the exposed surface of the Al-1% Si layer. For achieving high selectivity, the incident ion energy is adjusted so that the layer of the reaction product is not sputtered.

REFERENCES:
patent: 5176790 (1993-01-01), Arleo et al.

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