Dry etching apparatus, etching method, and method of forming...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C710S063000

Reexamination Certificate

active

06930047

ABSTRACT:
An etching apparatus is provided, in which a plurality of electrodes are disposed for placing a substrate, high-frequency power sources as many as electrodes are provided, and the electrodes and the high-frequency power sources are connected to each other independently. Among a plurality of electrodes, a high-frequency power applied to an electrode disposed below the central portion of the substrate and a high-frequency power applied to electrodes disposed below comer portions of the substrate are controlled respectively, whereby in-plane uniformity of etching can be enhanced.

REFERENCES:
patent: 4233109 (1980-11-01), Nishizawa
patent: 4885074 (1989-12-01), Susko et al.
patent: 5716534 (1998-02-01), Tsuchiya et al.
patent: 5767017 (1998-06-01), Armacost et al.
patent: 5824606 (1998-10-01), Dible et al.
patent: 5883007 (1999-03-01), Abraham et al.
patent: 5906948 (1999-05-01), Liu et al.
patent: 6239403 (2001-05-01), Dible et al.
patent: 6259106 (2001-07-01), Boegli et al.
patent: 6357385 (2002-03-01), Ohmi et al.
patent: 6423242 (2002-07-01), Kojima et al.
patent: 6431112 (2002-08-01), Sill et al.
patent: 6515336 (2003-02-01), Suzawa
patent: 6534826 (2003-03-01), Yamazaki
patent: 6556702 (2003-04-01), Rishton et al.
patent: 6753257 (2004-06-01), Yamazaki
patent: 10-326772 (1998-12-01), None
El-Kareh, Badih, “Fundamentals of Semiconductor Processing Technologies”, 1998, Kluwer Academic Publishers, third printing, p. 285.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dry etching apparatus, etching method, and method of forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dry etching apparatus, etching method, and method of forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dry etching apparatus, etching method, and method of forming... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3445722

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.