Dry etching apparatus and dry etching method

Details Dry etching apparatus and dry etching method Dry etching apparatus and dry etching method

2005-01-05

2008-11-04

Richards, N. Drew (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S709000, C438S710000, C438S713000, C156S345250, C156S345350, C156S345410, C156S345470

Reexamination Certificate

active

07446048

ABSTRACT:
An etching apparatus of the present invention comprises a reaction chamber, a lower electrode placed on the bottom surface of the reaction chamber, an upper electrode placed at the ceiling of the reaction chamber to face the lower electrode, and a focus ring placed on the lower electrode and having a cavity for holding a to-be-processed substrate. The lower surface of the upper electrode is provided, at its middle part, with a recess having a smaller inside diameter than the diameter of the to-be-processed substrate. Thus, in the generation of plasma, the amount of further incident radicals can be reduced in a middle part of the to-be-processed substrate. Therefore, a hole or the like located in the middle part of the to-be-processed substrate can be formed to have a desired shape without having a tapered shape.

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