Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1984-04-06
1984-12-11
Demers, Arthur P.
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
204192R, 204192E, C23C 1500
Patent
active
044876785
ABSTRACT:
The invention is directed to a dry-etching apparatus used for etching an aluminum wiring film formed on a wafer, and more particularly to a dry-etching apparatus which can remove chlorides deposited on the surface of the wafer during the dry etching thereof, as well as an etching resist film, without having to take the wafer out. This dry-etching apparatus is provided with an etching chamber, a vacuum antechamber attached to the etching chamber by a gate valve, and a post-treatment chamber attached to the vacuum antechamber. The apparatus is so formed that etched wafers removed to the vacuum antechamber can be sent therefrom to the post-treatment chamber, and then the post-treated wafers can be removed to the vacuum antechamber again, and then removed therefrom to the atmosphere.
REFERENCES:
patent: 4322277 (1982-03-01), Opresko
patent: 4331526 (1982-05-01), Kuehnle
patent: 4379743 (1983-04-01), Nakatsukasa
patent: 4422916 (1983-12-01), McKelvey
Aiuchi Susumu
Fujii Teru
Kamimura Takashi
Noguchi Minori
Otsubo Toru
Demers Arthur P.
Hitachi , Ltd.
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