Dry etching apparatus

Details Dry etching apparatus Dry etching apparatus

1993-11-15

2000-12-26

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419233, 156345, C23C 1434

Patent

active

061653349

ABSTRACT:
A dry etching apparatus comprises a reaction chamber having an inlet of an etching gas and an outlet of a product gas, a first electrode structure provided in the reaction chamber with a major surface adapted for supporting an object, a second electrode structure having a major surface that opposes the major surface of the first electrode structure with a parallel relationship, the second electrode structure having optical passage for passing an optical beam, the optical passage including a transparent window provided on a chamber wall of the reaction chamber, an aperture provided on the major surface of the second electrode structure in alignment with the window, and a void formed between the aperture and the window for freely passing a light beam between the window and the aperture, a cover member mounted detachable on the second electrode structure to cover the major surface thereof wherein the cover member having an aperture in alignment with the aperture on the major surface of the second electrode structure to pass an optical beam that has entered into the optical passage through the window and exiting through the aperture on the major surface of the second electrode structure; an optical source for producing coherent optical beam and directing the coherent optical beam to pass successively the optical passage in the second electrode structure and further through the aperture in the cover member, and an optical detector for detecting a reflection optical beam produced as a result of reflection of the incident coherent optical beam at the object and exiting after passing through the aperture in the cover member and the optical passage in the second electrode structure through the window on the wall of the reaction chamber.

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patent: 4491496 (1985-01-01), Laporte et al.
patent: 4496425 (1985-01-01), Kuyel
Bennett et al, "Selective . . . WSi.sub.2 ", IBM Tech. Dis. Bulletin, vol. 25, No. 1 Jun. 1982, p. 33-34.
"Endpoint Detection in Plasma Etching", Roland et al, Journal of Vacuum Science & Technology/A, vol. 3, No. 3, May-Jun., 1985, pp. 631-636.
"Plasma Etching of Organic Materials. I. Polyimide in O.sub.2 -CF.sub.4 ", Egitto et al, Journal of Vacuum Science & Technology/B, vol. 3, No. 3, May-Jun., 1985, pp. 893-904.
Patent Abstracts of Japan, vol. 8, No. 127 (E-250) [1564], Jun. 14, 1984, & JP-A-59 40 534, Mar. 6, 1984.
"Protective Cover for the Anode of a Plasma Enhanced Chemical Vapor Deposition Tool", IBM Technical Disclosure Bulletin, vol. 27, No. 10A, Mar., 1985, pp. 5666-5667.

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