Dry etching apparatus

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156657, 1566591, C23F 102, H01L 21312

Patent

active

043714129

ABSTRACT:
A radio frequency and a static electric field are superposedly applied to a low pressure gas to generate a gaseous plasma and to drive ions of selected polarity in a predetermined direction. The processing chamber is pre-evacuated to a sufficiently high vacuum, and an etching gas is introduced into the chamber to be rendered to a low pressure at which the mean free path of the ions is sufficiently long. The pressure of the etching gas may range from the order of 10.sup.-2 Torr to several Torr for etching silicon, using a silicon oxide as a mask material.
This method improves the treating accuracy, especially minimizes the amount of side etch, as compared with the conventional plasma etching, and reduces the surface damage when compared with the known ion beam etching.

REFERENCES:
patent: 4123316 (1978-10-01), Tsuchimoto
patent: 4178877 (1979-12-01), Kudo

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Dry etching apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dry etching apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dry etching apparatus will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2406876

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.