Dry etching apparatus

Details Dry etching apparatus Dry etching apparatus

1991-10-11

1993-08-03

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156626, 156643, 118723, H01L 2100

Patent

active

052325377

ABSTRACT:
Plasma light beams emitted from a plurality of monitoring areas on a wafer are introduced via windows and optical fibers, respectively, and detected by a detector. The detector determines etching end times of the respective monitoring areas. A calculating section calculates a maximum allowable etching end time based on the first-determined etching end time and a predetermined uniformity standard. If the etching ends of all the monitoring areas have not been determined at the time point of the calculated maximum allowable etching end time, a controller immediately stops the etching process.

REFERENCES:
patent: 4312732 (1982-01-01), Degenkolb et al.
patent: 4569592 (1986-02-01), Osada et al.
patent: 5002631 (1991-03-01), Giapis et al.
Bondur et al.; "Counter--Electrode Structure for End-Point Detection"; IBM Technical Disclosure; vol. 22; No. 10, Mar. 1980.

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