Dry etching

Details Dry etching Dry etching

2005-04-12

2005-04-12

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S720000, C216S058000

Reexamination Certificate

active

06878635

ABSTRACT:
A metallic thin film of copper, silver, gold, or one alloy selected from alloys containing as a main component at least one of these metals is etched by plasma of an etching gas containing at least nitrogen oxide while being reacted with the plasma, whereby making it possible to fine-process electrically conductive materials, heat-transfer materials and electric-contact materials made of copper, silver, gold or an alloy containing as a main component at least one of these metals.

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patent: 5821169 (1998-10-01), Nguyen et al.
patent: 5846884 (1998-12-01), Naeem et al.
patent: 6605541 (2003-08-01), Yu

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