Dry-etched amorphous silicon device with recessed electrode

Details Dry-etched amorphous silicon device with recessed electrode Dry-etched amorphous silicon device with recessed electrode

1990-03-26

1992-11-24

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

25037001, 257773, H01L 3118, H01L 2944

Patent

active

051667576

ABSTRACT:
A dry-etched amorphous silicon device which includes an amorphous silicon layer between upper and lower electrodes wherein the adverse effects of dangling silicon bonds on the periphery of the amorphous silicon layer are avoided by cutting back the peripheral surface of at least one of the electrodes to be radially inward of the peripheral surface of the amorphous silicon layer by at least one micron with respect to an axis of the device.

REFERENCES:
patent: 3154692 (1964-10-01), Shockley
patent: 4385200 (1983-05-01), Hamakawa et al.
patent: 4692782 (1987-09-01), Seki et al.

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