Dry etch stop process for eliminating electrical shorting in...

Details Dry etch stop process for eliminating electrical shorting in... Dry etch stop process for eliminating electrical shorting in...

2011-06-07

2011-06-07

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S048000, C438S059000, C257S071000, C257S298000

Reexamination Certificate

active

07955870

ABSTRACT:
The present invention relates generally to semiconductor fabrication and particularly to fabricating magnetic tunnel junction devices. In particular, this invention relates to a method for using the dielectric layer in tunnel junctions as an etch stop layer to eliminate electrical shorting that can result from the patterning process.

REFERENCES:
patent: 5854116 (1998-12-01), Ohmi et al.
patent: 6815248 (2004-11-01), Leuschner et al.
patent: 2002/0038681 (2002-04-01), Nakatani et al.

Affiliated with

Also associated with

Rating

Dry etch stop process for eliminating electrical shorting in... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dry etch stop process for eliminating electrical shorting in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dry etch stop process for eliminating electrical shorting in... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2654163