Dry etch process to edit copper lines

Details Dry etch process to edit copper lines Dry etch process to edit copper lines

2005-05-31

2005-05-31

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S705000, C438S714000, C438S717000, C438S725000, C438S734000, C216S062000, C216S066000

Reexamination Certificate

active

06900137

ABSTRACT:
The present invention is directed to methods for editing copper features embedded within an organic body by exposing at least a portion of a top surface of the copper feature, forming a mill box there-over and then simultaneously milling both the copper feature and any organic material exposed through the mill box in a single step using an ion beam in combination with a XeF2gas for a dwell time of at least 10 milliseconds. The invention dramatically increases the efficiency of Focused Ion Beam milling of copper features embedded in organic layers by milling these features in a gas-depleted environment at significantly increased dwell time while avoiding the problems of graphitization, destruction of the organic layer and metal redeposition.

REFERENCES:
patent: 6468917 (2002-10-01), Li et al.
patent: 6645872 (2003-11-01), Russell et al.
patent: 6653240 (2003-11-01), Crawford
patent: 6730237 (2004-05-01), Sievers et al.
patent: 2004/0038433 (2004-02-01), Fischer et al.
patent: 2004/0063330 (2004-04-01), Crawford
patent: 2004/0082176 (2004-04-01), Kane et al.

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