Dry etch process control using electrically biased stop junction

Details Dry etch process control using electrically biased stop junction Dry etch process control using electrically biased stop junction

1996-06-25

1997-06-10

Kunemund, Robert

Semiconductor device manufacturing: process

Direct application of electrical current

1566621, 216 67, 216 79, 430312, 430706, 430718, 430719, H01L 21306

Patent

active

056371896

ABSTRACT:
A dry etch process for etching a semiconductor substrate having a p-n heterojunction formed by contact between a p-layer and a n-layer requires application of a reverse bias voltage of less than a p-n breakdown voltage across the p-n heterojunction. A plasma containing chemically reactive negative ions is directed against the n-layer, with etching of non-masked regions of the substrate continuing until it is substantially stopped at the reverse biased p-n heterojunction. The semiconductor substrate can be cooled or periodically recoated with erodable protective material to limit sidewall damage to the semiconductor substrate while still allowing downward etching. This dry etch process is well suited for construction of dimensionally accurate microdevices and microelectromechanical systems.

REFERENCES:
patent: 4717448 (1988-01-01), Cox et al.
patent: 4758305 (1988-07-01), Bonifield et al.
patent: 4971653 (1990-11-01), Powell et al.
patent: 5129981 (1992-07-01), Wang et al.
patent: 5129982 (1992-07-01), Wang et al.
patent: 5242533 (1993-09-01), Trah et al.
patent: 5312717 (1994-05-01), Sachdev et al.
patent: 5338416 (1994-08-01), Mlcak et al.
patent: 5356829 (1994-10-01), Willman
patent: 5455419 (1995-10-01), Bayer et al.
patent: 5460684 (1995-10-01), Saeki et al.
patent: 5474650 (1995-12-01), Kumihashi et al.
patent: 5498312 (1996-03-01), Laermer et al.
Innovations. Surface Technology Systems Limited, Issue 3, 1994.
Innovations. Surface Technology Systems Limited, Jul. 1995.
J. K. Bhardwaj et al. Advanced Silicon Etching Using High Density Plasmas. SPIE, vol. 2639, pp. 224-233.
D. Craven et al. Anisotropic High-Aspect Ratio Etching in a High-Density Plasma. SPIE Conf. on Micromachining and Microfabrication '95, Oct. 1995, pp. 1-11.
D. Craven et al. Etching Technology and Applications for "Through-the-Wafer" Silicon Etching. SPIE vol. 2639, pp. 259-263.
H. Jansen et al. A Survey on the Reactive Ion Etching of Silicon in Microtechnology. RIE of Si in Microtechnology, vol. 6, 1996, pp. 14-28.

Affiliated with

Also associated with

Rating

Dry etch process control using electrically biased stop junction does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Dry etch process control using electrically biased stop junction, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Dry etch process control using electrically biased stop junction will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-762286