Dry cleaning process for cleaning a surface

Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...

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134 3, 134 2, 134 21, B08B 500, C23F 100, C03C 2300

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057256772

ABSTRACT:
A dry cleaning method for removing metal contaminants from a surface of an oxide film such that no substantial etching of the oxide film occurs, includes the steps of supplying a halide gas containing an element that is selected from the group IIIa elements, group IVa elements and the group Va elements in a form of halide, to the oxide film, thereby dry cleaning the surface of the oxide film.

REFERENCES:
patent: 5030319 (1991-07-01), Nishimo et al.
patent: 5213622 (1993-05-01), Bohling et al.
Ringi Sugino et al., "Ultra Violet Excited Cl-radical etching of Si through Native oxides", Journal of Applied Physics, vol. 76, No. 9, 1 Nov. 1994.
Sugino et al, IEICE Trans, Electron. vol. E75-C, No. 7, Jul., 1992, pp. 829-833.
Sugino et al, Extended Abstract of SSDM '87, Aug. 25-27, 1987.

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