Droplet migration doping using reactive carriers and dopants

Details Droplet migration doping using reactive carriers and dopants Droplet migration doping using reactive carriers and dopants

1978-09-21

1979-06-26

Ozaki, G.

Metal treatment

Compositions

Heat treating

148171, 148178, 148188, H01L 21228

Patent

active

041592158

ABSTRACT:
Aluminum is employed as a carrier metal for antimony in order to N-type dope semiconductor material by temperature gradient zone melting (TGZM) processing.

REFERENCES:
patent: 2813048 (1957-11-01), Pfann
patent: 3988766 (1976-10-01), Anthony et al.
patent: 4001047 (1977-01-01), Boah
J. of App. Physics, vol. 48, No. 6, Jun. 1977, pp. 2196-2201.

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