Driving method of nonvolatile memory and nonvolatile memory...

Details Driving method of nonvolatile memory and nonvolatile memory... Driving method of nonvolatile memory and nonvolatile memory...

2007-10-02

2007-10-02

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185180

Reexamination Certificate

active

11371908

ABSTRACT:
To increase a cell current ratio of a program state to an erase state of two bit storage nonvolatile memory cells and reduce power consumption, a program state of MONOS-typed memory cells is a state where electrons are injected into two local regions near drain and source junction edges, an erase state is a state where the electrons injected into the two local regions are neutralized or holes are injected, and a read bias is a linear region. A cell current in the program state can be suppressed since charges injected into the source side suppress introduction of electron carriers required for formation of a conductive channel and charges injected into the drain side limit the formation of the conductive channel near the drain side. Accordingly, a read current can be reduced, a cell current ratio can be enhanced, and moreover, a margin of a reading operation can be increased.

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