Driving memory bitlines using boosted voltage

Details Driving memory bitlines using boosted voltage Driving memory bitlines using boosted voltage

1997-12-23

1999-08-03

Nelms, David

Static information storage and retrieval

Addressing

36523008, 36523006, 36518523, G11C 800

Patent

active

059333863

ABSTRACT:
An apparatus for driving a bitline driver of a memory array is disclosed. The memory array has row lines, complementary pairs of bitlines driven by bitline drivers, and memory cells at the intersections of the bitlines and the row lines. First and second complementary write data lines provide a bit to be written to the driver and a complement of the bit. A source of a boosted voltage is coupled to a level shifter that conducts the boosted voltage to the bitline driver when the write enable line and the first write data line are asserted. The data bit is latched through a bistable latch to the bitline driver when the write enable line is asserted. A method of driving a bitline of a memory array involves receiving a data bit to be written to the bitline and a complement of the data bit; boosting one of the data bits to a voltage of a magnitude greater than a supply voltage of the memory array; and driving the data bit to a bitline driver.

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