Driving circuit for use with high voltage depletion-mode...

Electricity: power supply or regulation systems – In shunt with source or load – Using a three or more terminal semiconductive device

Reexamination Certificate

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Details

C323S282000, C323S289000, C361S018000

Reexamination Certificate

active

07928702

ABSTRACT:
A driving circuit for a half bridge utilizing bidirectional semiconductor switches in accordance with an embodiment of the present application includes a high side driver operable to control a high side bidirectional semiconductor switch, wherein the high side driver provides a negative bias voltage to the bidirectional semiconductor switch to turn the high side bidirectional semiconductor switch OFF. A low side driver may be operable to control a low side bidirectional semiconductor switch. An external voltage source with a negative terminal of the voltage source connected to the high side driver may be provided. A high side driving switch may be positioned between the negative terminal of the voltage source and the high side driver and operable to connect the high side driver to the negative terminal of the voltage source when the low side driver turns the low side bidirectional semiconductor switch ON.

REFERENCES:
patent: 2006/0198173 (2006-09-01), Rozman
patent: 2008/0136390 (2008-06-01), Briere
patent: 2008235952 (2008-10-01), None

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