Driving circuit for non-volatile DRAM

Details Driving circuit for non-volatile DRAM Driving circuit for non-volatile DRAM

2006-05-30

2006-05-30

Elms, Richard (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185240, C365S185250

Reexamination Certificate

active

07054201

ABSTRACT:
A driving circuit for use in a non-volatile dynamic random access memory (NVDRAM) having a nonconductor which can trap electrons or holes includes an internal supply voltage generator for generating the plurality of internal supply voltages, each having at least two different voltage levels; a mode controller for determining an operation mode of the NVDRAM; a voltage level selector for selecting one voltage level of each internal supply voltage in response to the operation mode to thereby outputs the selected voltage level of each internal supply voltage to the row decoding block and the core area; a row decoding block for receiving the internal supply voltages and outputting the internal supply voltages in response to an inputted address; and a core area having a plurality of unit cells, each storing a data, for accessing the data in response to inputted voltage levels of the plurality of internal supply voltages.

REFERENCES:
patent: 4471471 (1984-09-01), DiMaria
patent: 5331188 (1994-07-01), Acovic et al.
patent: 2005/0041474 (2005-02-01), Ahn et al.
patent: 2005/0047194 (2005-03-01), Ahn et al.

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