Driving circuit for integrated circuit semiconductor memory

Details Driving circuit for integrated circuit semiconductor memory Driving circuit for integrated circuit semiconductor memory

1978-06-23

1979-11-27

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307246, 307251, 307DIG4, H03K 1712, H03K 1704, H03K 1760, H03K 3353

Patent

active

041762894

ABSTRACT:
An improved driving circuit is provided especially for use in an integrated circuit semiconductor memory which operates on low power supply voltage, such as 5 volts, the drive circuit employing field effect transistors coupled with bootstrap capacitor devices and responsive to an input pulse for supplying, at its output terminal, a pulse having a peak voltage potential substantially equal to the power supply voltage value despite the inherent threshold voltage drops of the field effect transistors utilized. In the drive circuit, in response to an input pulse, the reference voltage for charged capacitor devices is switched between a first level and a raised second, higher level to place the capacitor devices in series with each other and the raised reference voltage to overdrive an output switch device so as to connect substantially its full power supply voltage to its output terminal during a corresponding output pulse.

REFERENCES:
patent: Re27305 (1972-03-01), Polkinghorn et al.
patent: 3714466 (1973-01-01), Spence
patent: 3740660 (1973-06-01), Davies, Jr.
patent: 3742260 (1973-06-01), Boudry
patent: 3769528 (1973-10-01), Chu et al.
patent: 3889135 (1975-06-01), Nomiya et al.
patent: 3937983 (1976-02-01), Reed
patent: 3938108 (1976-02-01), Salsbury et al.
patent: 3988617 (1976-10-01), Price
patent: 4071783 (1978-01-01), Knepper
patent: 4093875 (1978-06-01), Knepper

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