Driving circuit for IGBT

Details Driving circuit for IGBT Driving circuit for IGBT

1998-05-08

1999-11-02

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

327108, 327374, H03K 1716, H03K 1704

Patent

active

059778148

ABSTRACT:
A driving circuit for driving an IGBT includes a forward-bias power supply, a reverse-bias power supply, a forward-bias semiconductor switch, a reverse-bias semiconductor switch, a first resistor for limiting forward-bias current, and a second resistor for limiting reverse-bias current. In this driving circuit, one terminal of a capacitor is connected to a common node of the resistor for limiting forward-bias current, the resistor for limiting reverse-bias current, and a gate of the IGBT. A mode switching semiconductor switch is connected at one terminal to the other terminal of the capacitor. The other terminal of the mode switching semiconductor switch is connected to a common node of the forward-bias power supply and the reverse-bias power supply. In operation, the mode switching semiconductor switch is turned on and turned off so as to establish a given rate of change of voltage which is independently selected for turn-on and turn-off of the IGBT.

REFERENCES:
patent: 5089719 (1992-02-01), Kamei et al.
patent: 5121283 (1992-06-01), Ibori et al.
patent: 5526216 (1996-06-01), Konrad et al.
patent: 5530385 (1996-06-01), Miettinen
patent: 5646514 (1997-07-01), Tsunetsugu
patent: 5818281 (1998-10-01), Ohura et al.

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