Driving circuit for electronic semiconductor devices including a

Details Driving circuit for electronic semiconductor devices including a Driving circuit for electronic semiconductor devices including a

1995-10-27

1998-01-13

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including high voltage or high power devices isolated from...

257499, 257378, 257501, 257506, 327500, H01L 2701, H01L 2900

Patent

active

057082901

ABSTRACT:
The invention relates to a control circuit for semiconductor devices which is formed on a substrate (1) doped by a first dopant type, the integrated circuit comprising a first epitaxial layer (2) grown on the substrate (1) and doped by the first dopant type, and an isolation well (3) doped by a second dopant type, the control circuit comprising at least a first control transistor (M1) formed in a first well (8) doped by the second dopant type and formed in the insulation well (3). Thus, the control circuit comprises at least one N-channel MOS transistor accommodated within a well in direct contact with the isolation well to eliminate a buried layer that, in prior art arrangements, involved the presence of an undesired parasitic component.

REFERENCES:
patent: 4879584 (1989-11-01), Takagi et al.
patent: 5065212 (1991-11-01), Ohata et al.
patent: 5072278 (1991-12-01), Paparo et al.
patent: 5512774 (1996-04-01), Nakagawa et al.

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