Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-05-08
2007-05-08
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
Reexamination Certificate
active
10734834
ABSTRACT:
A charge pump circuit includes MOSFETs and MOS capacitors formed on the same substrate. Each of the MOS capacitors has a multiplicity of first electrodes formed in one region of the substrate, insulating layers formed on/above respective substrate regions between neighboring first electrodes, each layer covering at least the respective substrate region, and a multiplicity of second electrodes formed on/above the respective insulating layers. The MOS capacitors have improved frequency response.
REFERENCES:
patent: 5544102 (1996-08-01), Tobita et al.
patent: 6303957 (2001-10-01), Ohwa
patent: 58-159367 (1983-09-01), None
patent: 02-058365 (1990-02-01), None
patent: 06-283667 (1994-10-01), None
patent: 2000-057790 (2000-02-01), None
Oku Hironori
Tanaka Toshimasa
Hogan & Hartson LLP
Rohm & Co., Ltd.
Rose Kiesha
Smith Zandra V.
LandOfFree
Driver for driving a load using a charge pump circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Driver for driving a load using a charge pump circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Driver for driving a load using a charge pump circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3743686