Driver for an external FET with high accuracy and gate...

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Current driver

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C327S538000, C327S541000

Reexamination Certificate

active

06987403

ABSTRACT:
A circuit for driving an external FET has a differential amplification stage supplied by a first and second operating potential. An output load resistor is included in a current flow path in which the current is controlled by the voltage between two input terminals of the amplification stage. The current is substantially independent of variations of the first or second operating potentials. The output load resistor is connected between the gate and the source of the external FET12.

REFERENCES:
patent: 3760194 (1973-09-01), Lutz et al.
patent: 4626795 (1986-12-01), Tanaka et al.
patent: 4769616 (1988-09-01), Barbu
patent: 4797583 (1989-01-01), Ueno et al.
patent: 5122689 (1992-06-01), Barre
patent: 5214328 (1993-05-01), Ohi
patent: 5329183 (1994-07-01), Tamegaya
patent: 5568092 (1996-10-01), Shimizu et al.
patent: 5731686 (1998-03-01), Malhi
patent: 5774021 (1998-06-01), Szepesi et al.
patent: 5777502 (1998-07-01), Chen et al.
patent: 5963025 (1999-10-01), Colli
patent: 6002276 (1999-12-01), Wu
patent: 6275107 (2001-08-01), Maeda et al.
patent: 6566961 (2003-05-01), Dasgupta et al.
patent: 0 492 374 (1992-07-01), None
patent: 0 669 709 (1995-08-01), None
patent: 01093908 (1989-04-01), None
patent: 96/10287 (1996-04-01), None
patent: 98/20610 (1998-05-01), None
Titze, U. et al.: “Halbleiter-Schaltungstechnik” [Semiconductor Circuit Technology], Springer Verlag, vol. 2, 1971, pp. 196-197.
Barbara, N.V. et al.: “Ionizing-Radiation-Induced Degradation in Electronic Power Amplifiers”, IEEE, Oct. 7, 1990, pp. 1667-1672.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Driver for an external FET with high accuracy and gate... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Driver for an external FET with high accuracy and gate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Driver for an external FET with high accuracy and gate... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3525878

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.