Driver circuit for sinking current to two supply voltages

Details Driver circuit for sinking current to two supply voltages Driver circuit for sinking current to two supply voltages

1992-03-20

1994-03-22

Sikes, William L.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307254, 307255, 307263, 307300, 307570, 307246, 307270, H03K 1716

Patent

active

052967654

ABSTRACT:
An insulated gate bipolar transistor (IGBT) gate driver circuit with a push-pull output stage which provides current sinking to two power supply rails. Current sinking to a low impedance power supply rail (GND) via a high current NPN bipolar transistor provides fast IGBT turn off. A PNP bipolar transistor forward biased emitter-base junction in series with an N channel field effect transistor provides current-limited current sinking to a higher impedance power supply rail (V.sub.EE). The on resistance of the N channel field effect transistor can be chosen to set the maximum current drawn from the higher impedance V.sub.EE power supply rail. This current-limiting avoids the need for a second low impedance power supply. The transition of the output of the driver from ground to V.sub.EE is only a function of the output voltage output by the driver. It is not a function of any timed switching of transistors.

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