Driver circuit for gallium nitride (GaN) heterojunction...

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Current driver

Reexamination Certificate

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Details

C327S108000, C327S110000, C327S111000, C327S112000, C327S333000

Reexamination Certificate

active

08054110

ABSTRACT:
A driver circuit and integrated circuit implementation of a driver circuit for driving a GaN HFET device is disclosed. The driver circuit includes a resonant drive circuit having an LC circuit with an inductance and a capacitance. The capacitance of the LC circuit includes the gate-source capacitance of the GaN HFET device. The driver circuit further includes a level shifter circuit configured to receive a first signal and to amplify the first signal to a second signal suitable for driving a GaN HFET device. The resonant drive circuit is controlled based at least in part on the second signal such that the resonant drive circuit provides a first voltage to the GaN HFET device to control the GaN HFET device to operate in a conducting state and to provide a second voltage to the GaN HFET device to control the GaN HFET device to operate in a non-conducting state.

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patent: 7843237 (2010-11-01), Strzalkowski et al.
Chen, F.C. Lee, L. Amoroso, Ho-Pu Wu, “A Resonant MOSFET Gate Driver With Efficient Energy Recovery”, IEEE Transaction on Power Electronics, vol. 19, No. 2, Mar. 2004 pp. 470-477.
H. Ballan, High-voltage Devices and Circuits in standard CMOS Technologies, PhD Thesis EPFL,1997.
Richard. M. Forsyth, “Technology and Design of integrated circuits for up to 50Vapplications”, austria microsystems AG, Schloss Premstaetton, Unterpremstaetten, Austria, 2003 IEEE, pp. 7-13.
B.Wang, N. Tipirneni, M.Riva, A.Monti, G.Simin, E,Santi, “An efficient, High-frequency Drive Circuit for GaN power HFETs”, IEEE Transactions on Industry Applications, vol. 45, No. 2, Mar./Apr. 2009, pp. 843-853.
B. Wang, M. Riva, J. Bakos, A. Monti, “Integrated Circuit Implementation for a GaN HFETs Driver Circuit”, Applied Power Electronic Conference (APEC), 2008, pp. 1-6.

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