Drive through doping process for manufacturing low back surface

Fishing – trapping – and vermin destroying

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136256, 136255, 357 30, 357 68, 437235, 437160, H01L 3118

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active

047035536

ABSTRACT:
A method for providing deep impurity doped regions under the back contacts of a solar cell. In a semiconductor wafer with a p-n junction therein defining an n+ layer emitter and p-type layer bulk, a p+ layer is formed in the p-type layer under the back surface of the wafer. An oxide passivation layer is disposed over the back surface. Metal paste is screen printed onto the oxide layer in a predetermined pattern. The combination is heated to a temperature such that the metal paste will drive through the oxide layer and alloy with selected regions of p+ layer and p-type layer to a predetermined depth forming heavily doped p+ impurity regions. Metallization is applied onto the oxide layer making electrical contact with the heavily doped p+ impurity regions.

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