Drive device for a CMOS sense amplifier in a dynamic semiconduct

Details Drive device for a CMOS sense amplifier in a dynamic semiconduct Drive device for a CMOS sense amplifier in a dynamic semiconduct

1989-12-21

1991-07-09

Callahan, Timothy P.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307279, 365206, G11C 1300, H03K 3356

Patent

active

050308599

ABSTRACT:
A drive device for a CMOS sense amplifier in a dynamic semiconductor memory includes a capacitor, a first switch circuit for making a connection between a power supply line, a first terminal of the capacitor and a pull-up transistor drive terminal of the sense amplifier in accordance with an input signal, and a second switch circuit for making a connection between a ground line, a second terminal of the capacitor and a pull-down transistor drive terminal of the sense amplifier in accordance with an input signal. Before driving the CMOS sense amplifier, the first and second terminals of the capacitor are connected to the power supply line and the ground line by the first and second switch circuits, respectively. Then, the first and second terminals of the capacitor are connected to the pull-up and pull-down transistor drive terminals by the respective switch circuits so that the sense amplifier is driven by the potential difference of both terminals of the charged capacitor. Thereafter, the pull-up and pull-down transistor drive terminals of the sense amplifier are connected to the power supply line and the ground line by the respective switch circuits so as to be restored. As a result, common mode noise is prevented from being generated when a plurality of CMOS sense amplifiers are driven at the same time so that the reliability of the dynamic semiconductor memory is improved.

REFERENCES:
patent: 4858193 (1989-08-01), Furutami et al.
patent: 4943738 (1990-07-01), Hoshi

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