Drive circuit for substrate pump

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307296A, 307304, H03L 100, G05F 324, H03K 17693

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active

046282157

ABSTRACT:
A substrate pump circuit for generating a negative bias on the substrate of a semiconductor device employs a capacitor coupling an oscillator output to a pump node, and MOS diodes coupling the pump node to a ground terminal and to the substrate node; the MOS diode for the substrate node is reconfigured as an active switch, controlled by a complementary pump circuit. This circuit allows transfer of more charge from the pumping capacitor to the substrate capacitance on each pump cycle. Also, pumped charge is delivered directly to the substrate through ohmic connections, rather than through forward biased injecting junctions.

REFERENCES:
patent: 4259686 (1981-03-01), Suzuki et al.
patent: 4307333 (1981-12-01), Hargrove
patent: 4322675 (1982-03-01), Lee et al.
patent: 4455628 (1984-06-01), Ozaki et al.
patent: 4460835 (1984-07-01), Masuoka
patent: 4494223 (1985-01-01), Reddy et al.
patent: 4553047 (1985-11-01), Dillinger et al.
Lee et al, "A 80 ns 5 V-Only Dynamic RAM"; IEEE-ISSCC, 1979, Digest of Technical Papers, pp. 142-143.

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