Drive circuit for semiconductor device

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device

Reexamination Certificate

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Details

C327S108000, C327S374000, C327S427000

Reexamination Certificate

active

07075355

ABSTRACT:
A drive circuit for driving an insulated gate transistor, the drive circuit including a driver that applies a gate voltage to the transistor, and a timing controller that controls a timing of the driver. The driver includes first and second drive circuits, the first and second drive circuits are electrically connected to the timing controller through first and second electrical connections, respectively, the first and second electrical connections control the first and second drive circuits, respectively, and the driver is capable of applying the gate voltage as a first gate voltage through the first drive circuit to the transistor, and as a second gate voltage through the second drive circuit to the transistor. The first gate voltage is lower than a threshold voltage of the transistor, the second gate voltage is a specified voltage for driving the transistor, and the timing controller controls the driver so that an application of the first gate voltage precedes an application of the second gate voltage.

REFERENCES:
patent: 5926012 (1999-07-01), Takizawa et al.
patent: 6057728 (2000-05-01), Igarashi
patent: 6271709 (2001-08-01), Kimura et al.
patent: 6333665 (2001-12-01), Ichikawa
patent: 6720819 (2004-04-01), Yamamoto
patent: 3-93457 (1991-04-01), None
patent: 6-291631 (1994-10-01), None
patent: 10-150764 (1998-06-01), None
patent: 2000-228868 (2000-08-01), None
patent: 2001-352748 (2001-12-01), None

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