Drive circuit for power semiconductor switching device

Details Drive circuit for power semiconductor switching device Drive circuit for power semiconductor switching device

2011-08-09

2011-08-09

Nguyen, Long (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Current driver

C327S376000, C327S434000

Reexamination Certificate

active

07994826

ABSTRACT:
A gate driving circuit for a voltage-driven power semiconductor switching device has (a) the voltage-driven power semiconductor switching device, (b) a driving circuit for supplying a drive signal to the gate electrode of the switching device, and (c) an inductance between the emitter control terminal or source control terminal of the switching device and the emitter main terminal or source main terminal of a semiconductor module. A voltage produced across the inductance is detected. The gate-driving voltage or gate drive resistance is made variable based on the detected value.

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Igarashi, S., et al; “An Active Control Gate Drive Circuit for IGBTs to Realize Low-noise and Snubberless System,” (pp. 69-72); 1997 IEEE, 0-7803-3993-2/97.
Lee, Hwang-Geol, et al; “An Improved Gate Control Scheme for Snubberless Operation of High Power IGBTs,” (pp. 975-982); IEEE Industry Application Society Annual Meeting, New Orleans Louisiana, Oct. 5-9, 1997.
Decision of Feb. 24, 2011 Regarding German Patent Application No. 10 2007 002 543.4-32 [11 pages] (In German) with English language translation.

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