Drive circuit for IGBT device

Details Drive circuit for IGBT device Drive circuit for IGBT device

1989-10-17

1991-10-08

Callahan, Timothy P.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307270, 307592, 307546, 361 86, 361101, H03K 1708, H03K 1728

Patent

active

050557211

ABSTRACT:
A MOS transistor (Q.sub.M) detects an increase of the collector current (I.sub.C) of an IGBT device (Q.sub.O). When an excess current passes, the transistor (Q.sub.M) turns on, which restricts the gate voltage (V.sub.G) of the IGBT device (Q.sub.O) to decrease the collector current (I.sub.C). This protects the IGBT device (Q.sub.O) from the excess current. A Zener diode (D.sub.Z) placed on a path which is for detecting the excess current of the IGBT device (Q.sub.O) restricts the current passing through the path. This decreases reactive power which is consumed in protecting the device (Q.sub.O) from the excess current while protecting a drive circuit from an erroneous operation.

REFERENCES:
patent: 4301490 (1981-11-01), Nagel et al.
patent: 4591734 (1986-05-01), Laughton
patent: 4612457 (1986-09-01), Prater
patent: 4721869 (1988-01-01), Okada

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