Drive circuit for driving power semiconductor device

Details Drive circuit for driving power semiconductor device Drive circuit for driving power semiconductor device

2005-06-14

2005-06-14

Lam, Tuan T. (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Delay controlled switch

C327S394000, C361S101000

Reexamination Certificate

active

06906574

ABSTRACT:
A drive circuit includes a gate voltage detector that detects a gate-emitter voltage Vge that appears between the gate and emitter of a power semiconductor device throughout a detection time period during which a sampler allows the process of detecting the gate-emitter voltage Vge, and that recognizes the occurrence of an abnormality in the power semiconductor device when the gate-emitter voltage Vge exceeds a reference value. Therefore, the drive circuit can protect the power semiconductor device with higher reliability by promptly detecting the occurrence of a short circuit even when the power semiconductor device is resistant to high voltages.

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R. Chokhawala et al., “A Discussion on IGBT Short-Circuit Behavior and Fault Protection Schemes”,IEEE Trans. Ind. Applications, 1995, pp. 256-263, 31(2).

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