Drive circuit for driving cascode bipolar-MOS circuit

Details Drive circuit for driving cascode bipolar-MOS circuit Drive circuit for driving cascode bipolar-MOS circuit

1988-05-17

1990-02-20

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307300, 307315, H03K 1704, H03K 1756

Patent

active

049029215

ABSTRACT:
The drive circuit for driving a cascode bipolar MOS circuit (1) has a bipolar transistor (21) coupled to a bipolar transistor (11) in the bipolar MOS circuit (1) through a Darlington connection. A base current for the bipolar transistor (11) is supplied through the other bipolar transistor (21), without a transformer.

REFERENCES:
"Bipolar-FET Combinational Power Transistors for Power Conversion Applications," Dan Y. Chen and Shaoan A. Chin, CH1855-6/1983, IEEE, pp. 514-519.
"A New 100A, 1000V Dual Cascode BIMOS Power Module for High Power and High Frequency Inverter Applications," Y. Kamitani, G. Majumdar, H. Yamaguchi and S. Mori, PCI, Oct. 1986, Proceedings, pp. 143-154.
International Rectifier, HEXFET Databook, 1985 Third Edition, pp. A125 and A128.
International Rectifier, HEXFET Designers's Manual, 1987 Fourth Edition, "High Voltage, High Frequency Switching . . . ", pp. I99-I101.
Bipolar und MOSFET als Kaskade, Dec. 1982, Markt & Technik, Nr. 48, Vom 3, pp. 66-68.

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