Drive circuit for a power semiconductor device

Details Drive circuit for a power semiconductor device Drive circuit for a power semiconductor device

2005-11-22

2005-11-22

Lam, Tuan T. (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Signal transmission integrity or spurious noise override

C327S381000, C327S383000

Reexamination Certificate

active

06967519

ABSTRACT:
A drive circuit for a power semiconductor device includes: a sampling signal generating circuit for detecting that an input control signal instructs OFF and outputting a sampling signal at the time instant of start of a Miller period of time of an IGBT; a gate voltage detecting circuit for detecting a Miller voltage of the IGBT at the timing when the sampling signal is inputted and outputting, when the Miller voltage is equal to or larger than a threshold, an over-current detection signal; and a gate voltage controlling circuit for controlling, in response to the over-current detection signal, a gate voltage of the IGBT in such a way that the IGBT is turned OFF at slower speed than in the normal state. Thus, it is possible to suppress a surge voltage which is generated when the IGBT is turned OFF during the flow of an over-current.

REFERENCES:
patent: 4736267 (1988-04-01), Karlmann et al.
patent: 5375029 (1994-12-01), Fukunaga et al.
patent: 5383082 (1995-01-01), Nishizawa
patent: 5621601 (1997-04-01), Fujihira et al.
patent: 5852538 (1998-12-01), Masui
patent: 5949273 (1999-09-01), Mourick et al.
patent: 5986484 (1999-11-01), Kimata
patent: 6088206 (2000-07-01), Chan et al.
patent: 4-165916 (1992-06-01), None

Affiliated with

Also associated with

Rating

Drive circuit for a power semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Drive circuit for a power semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Drive circuit for a power semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3484767