Drive circuit for a power MOSFET with source-side load

Details Drive circuit for a power MOSFET with source-side load Drive circuit for a power MOSFET with source-side load

1986-07-16

1987-09-01

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307574, 307270, 307200B, 361 18, 323284, H03K 17687, H03K 301, H02H 700, G05F 140

Patent

active

046911294

ABSTRACT:
When a power MOSFET operated as a source follower is driven by an electronic switch, an interruption of the connection between ground and the electronic switch may result in the output potential of the electronic switch to change so that the power MOSFET is partially switched on. This causes a considerable amount of power dissipation. Therefore, there is placed between the source and gate electrodes of the MOSFET a depletion MOSFET whose gate is connected to the terminal of the electronic switch intended for connection to ground. Thus, the power MOSFET remains non-conducting upon interruption of the connection between the electronic switch and ground.

REFERENCES:
patent: 4086642 (1978-04-01), Yoshida et al.
patent: 4511815 (1985-04-01), Wood
Krausse et al., "Power MOSFETs Run Directly Off TTL", Aug. 28, 1980, pp. 146-147.

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