Drive circuit for a power MOSFET with load at the source side

Details Drive circuit for a power MOSFET with load at the source side Drive circuit for a power MOSFET with load at the source side

1993-07-23

1994-12-06

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Current driver

327108, 327427, H03K 17687

Patent

active

053714180

ABSTRACT:
Power FETs having a load at the source side require a gate voltage lying above the drain voltage in order to be driven completely conductive. This can occur with a known pump circuit. In the drive circuit disclosed, the diode connected to the gate terminal of the power FET is a depletion FET whose substrate terminal is applied to the oscillating voltage that is required for the operation of the pump circuit. The cut off voltage is thus synchronously set relative to the oscillating voltage such that low losses arise when loading C.sub.GS and an adequately high inhibit voltage can be built up when loading the pump capacitor.

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patent: 4725813 (1988-02-01), Miyada
patent: 4733108 (1988-03-01), Truong
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patent: 4737667 (1988-04-01), Tihanyi
patent: 4796174 (1989-01-01), Nadd
patent: 4920280 (1990-04-01), Cho et al.
patent: 5272399 (1993-12-01), Tihanyi et al.
IEEE Transactions on Electron Devices, vol. 37, No. 4, Apr., 1990, "The Smart Power High-Side Switch: Description Of A Specific Technology, Its Basic Devices, And Monitoring Circuitries" by Elmoznine et al., pp. 1154-1161.
Patent Abstracts of Japan, Publication No. JP59097223, published May 6, 1984, Ooguro Takeshi et al, "Load Driving Circuit".
Siemens Forsch.-u. Entwickl.-Ber., vol. 17, 1988, No. 1, "Smart SIPMOS Technology" by J. Tihanyi, pp. 35-42.

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