Drift compensation in a flash memory

Details Drift compensation in a flash memory Drift compensation in a flash memory

2005-08-18

2010-10-19

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185030, C365S185220, C365S211000

Reexamination Certificate

active

07817469

ABSTRACT:
A plurality of memory cells are managed by obtaining values of one or more environmental parameters of the cells and adjusting values of one or more reference voltages of the cells accordingly. Alternatively, a statistic of at least some of the cells, relative to a single reference parameter that corresponds to a control parameter of the cells, is measured, and the value of the reference voltage is adjusted accordingly. Examples of environmental parameters include program-erase cycle count, data retention time and temperature. Examples of reference voltages include read reference voltages and program verify reference voltages. Examples of statistics include the fraction of cells whose threshold voltages exceed initial lower bounds or initial medians.

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