Static information storage and retrieval – Addressing – Plural blocks or banks
Reexamination Certificate
2005-08-02
2005-08-02
Lam, David (Department: 2827)
Static information storage and retrieval
Addressing
Plural blocks or banks
C365S230080, C365S230060
Reexamination Certificate
active
06925028
ABSTRACT:
A DRAM and access method for DRAM with a high data rate in a random row access mode. The DRAM includes a plurality of memory blocks composed of a plurality of storage segments each with a series of main word lines and sub-word lines. Each memory block is decoded into multiple segments and the main word lines are activated to select a predetermined number of sub-word lines. A corner block is provided that contains a plurality of Z-lines for selecting one of the sub-wordlines and a plurality of segment select lines for selecting a specific memory segment by activating a local Z-line.
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Hosokawa Kohji
Sunaga Toshio
Watanabe Shinpei
International Business Machines - Corporation
Lam David
LeStrange Michael J.
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