Dram with FET stacked over capacitor

Details Dram with FET stacked over capacitor Dram with FET stacked over capacitor

1986-09-08

1988-06-14

Larkins, William D.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 237, 357 55, 357 59, 365149, 437 49, 437 52, 437 83, 437907, 437915, H01L 2704, G11C 1140

Patent

active

047515570

ABSTRACT:
A semiconductor memory wherein a part of each capacitor is formed on side walls of an island region surrounded with a recess formed in a semiconductor substrate, and the island region and other regions are electrically isolated by the recess.

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Clarke et al., "Capacitor for Single FET Memory Cell," IBM Tech. Discl. Bull., vol. 17, No. 9, Feb. 1975, pp. 2579-2580.
Dockerty, "High-Capacitance, One-Device Memory Cell," IBM Tech. Discl. Bull., vol. 19, No. 2, Jul. 1979, p. 506.

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