DRAM with a vertical channel structure and process for manufactu

Details DRAM with a vertical channel structure and process for manufactu DRAM with a vertical channel structure and process for manufactu

1996-09-06

1998-01-20

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437203, 437919, H01L 218242

Patent

active

057100560

ABSTRACT:
A DRAM with a vertical channel structure is manufactured with an epitaxial silicon layer, above a silicon substrate, and is preformed with a source region. A well is formed in the epitaxial silicon layer. A trench is formed to penetrate into the source region. A first insulating layer is formed on a surface of the trench and then a gate is formed, almost completely filling up the remaining space in the trench. A drain region is formed inside the well. A storage capacitor is formed above the drain region.

REFERENCES:
patent: 4833094 (1989-05-01), Kenney
patent: 4873205 (1989-10-01), Critchlow et al.
patent: 5362665 (1994-11-01), Lu

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