DRAM process with improved poly-to-poly capacitor

Details DRAM process with improved poly-to-poly capacitor DRAM process with improved poly-to-poly capacitor

1992-10-27

1993-09-14

Fourson, George

Fishing, trapping, and vermin destroying

437 60, 437919, 437978, 437979, H01L 2170

Patent

active

052448258

ABSTRACT:
The present invention teaches a new method for fabrication of DRAM cells having an upper capacitor plate over the polysilicon storage gate. To provide a very high specific capacitance and very good integrity between the first poly storage gate and the (second or third poly) upper capacitor plate, the dielectric is formed as an oxide
itride composite which is then reoxidized. This provides the advantages of high dielectric integrity, high specific capacitance, uniformity and reproducibility.

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