DRAM memory cell with tapered capacitor electrodes

Details DRAM memory cell with tapered capacitor electrodes DRAM memory cell with tapered capacitor electrodes

1990-05-02

1991-11-26

James, Andrew J.

357 68, 357 236, 357 71, H01L 2904, H01L 2348, H01L 2968

Patent

active

050687077

ABSTRACT:
A DRAM cell structure having a capacitance electrode with a tapered end surface is disclosed. The tapered end surface eliminates prior art structures formed during fabrication of the cell structure that decreased yield. The cell structure of this invention provides increased yield without increasing the number of process steps required to form the cell structure. A unique process for forming the capacitance electrode with a tapered end surface is also provided.

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patent: 4863562 (1989-09-01), Bryant et al.
"Muilti-Step Etching of Dissimilar Materials Achieving Selectivity and Slope Control", IBM Technical Disclosure Bulletin, vol. 28, No. 7, Dec. 1985.

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