Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-04-12
2011-04-12
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE29342, C257SE29346, C257SE21396, C438S386000, C438S389000, C438S243000
Reexamination Certificate
active
07923815
ABSTRACT:
By controlling buried plate doping level and bias condition, different capacitances can be obtained from capacitors on the same chip with the same layout and deep trench process. The capacitors may be storage capacitors of DRAM/eDRAM cells. The doping concentration may be less than 3E19cm−3, a voltage difference between the biases of the buried electrodes may be at least 0.5V, and a capacitance of one capacitor may be at least 1.2 times, such as 2.0 times the capacitance of another capacitor.
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Cheng Kangguo
Faltermeier Johnathan E.
Parries Paul C.
Wang Geng
Abate Joseph P.
Cohn Howard M.
International Business Machines - Corporation
Patton Paul E
Smith Zandra
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